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Oxidation of aqueous HF-treated Si(001) surface induced by translational kinetic energy of O$$_{2}$$ at room temperature

Yoshigoe, Akitaka ; Teraoka, Yuden

We investigated oxidation reactions induced by the translational kinetic energy of O$$_{2}$$ on an Si(001) surface treated with aqueous hydrofluoric acid (HF) solution by combining synchrotron radiation photoemission spectroscopy with supersonic molecular beam techniques. The oxidation reactions at room temperature did not progress following up to approximately 3600 L exposure of O$$_{2}$$ with incident energy of 0.04 eV. On the other hand, the oxidation states up to the Si$$^{4+}$$ species including the Si$$^{1+}$$, Si$$^{2+}$$ and Si$$^{3+}$$ species were formed when the incident energy was 3.0 eV. The thickness of oxidized layers was estimated to be 0.26 nm at the final oxidation stages. Thus, we concluded that the Si atoms at the top layers were oxidized by the translational kinetic energy of 3.0 eV.

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Category:Physics, Applied

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