Influence of thermal history on crystal nucleation in silicon carbide amorphized with neon irradiation

Ne照射により非晶質化したSiC中の結晶核生成への熱履歴の影響

相原 純 ; 石原 正博 ; 北條 喜一; 古野 茂実*

Aihara, Jun; Ishihara, Masahiro; Hojo, Kiichi; Furuno, Shigemi*

SiCをNe照射して非晶質化させ、1273Kで焼鈍した。一つの試料は60分連続焼鈍し、もう一つの試料はくり返し焼鈍した(5分10回)。非晶質SiC中での結晶核生成はくり返し焼鈍の方が連続焼鈍より起こりやすかった。

SiC specimens were amorphized with Ne irradiation and annealed at 1273K. One specimen was annealed continuously for 60 minutes, the other was annealed repeatedly (5 minutes 10 times). Crystal nucleation in the amorphized SiC was apt to occur more in the case of repeated annealing than in the case of continuous annealing.