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Fluorine-doping in titanium dioxide by ion implantation technique

Yamaki, Tetsuya; Umebayashi, Tsutomu; Sumita, Taishi*; Yamamoto, Shunya; Maekawa, Masaki; Kawasuso, Atsuo; Ito, Hisayoshi

Single crystalline titanium dioxide (TiO$$_{2}$$) rutile were implanted with 200keV F$$^{+}$$ at a nominal fluence of 1$$times$$10$$^{16}$$ to 1$$times$$10$$^{17}$$ ions cm$$^{-2}$$ and then thermally annealed in air up to 1200$$^{circ}C$$ for 5h. The radiation damage and its recovery during the subsequent annealing were analyzed by Rutherford backscattering spectrometry in channeling geometry and variable-energy positron annihilation spectroscopy. The lattice disorder was completely annealed at 1200$$^{circ}C$$ by the diffusion of point defects to the surface acting as a sink. According to the secondary ion mass spectrometry, the F depth profile was shifted to a shallower region along with the damage recovery, finally producing an F-doped layer where the impurity concentration increased steadily towards the surface. The F doping proved to provide a small modification to the conduction-band edge of TiO$$_{2}$$, as assessed by theoretical band calculations.

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Category:Instruments & Instrumentation

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