A Positron lifetime study of defects in neutron-irradiated Si

A.Li*; H.Huang*; D.Li*; S.Zheng*; H.Du*; S.Zhu*; Iwata, Tadao

no abstracts in English

Language	:	English
Journal	:	Japanese Journal of Applied Physics
Volume	:	32
Number	:	3
Pages	:	p.1033 - 1038
Publication Year/Month	:	1993/03
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Paper URL	:	https://doi.org/10.1143/JJAP.32.1033
DOI for research data	:
Keywords	:	Silicon; Lattice Defects; Vacancy-oxygen Complexes; Positron Lifetime; Neutron Irradiation; Annealing
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Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:44.68 Category:Physics, Applied
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Registration No. : A19920510
JAEA Abstracts No. : 210445
Paper Submission No. : 11708

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