High energy Ni ion implantation and thermal annealing for -SiC single crystal

not registered; Kawatsura, Kiyoshi*; Arai, Shigeyoshi*; not registered; not registered; not registered; not registered; Takeshita, Hidefumi; Yamamoto, Shunya; Aoki, Yasushi; Naramoto, Hiroshi

no abstracts in English

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	91
Number	:
Pages	:	p.529 - 533
Publication Year/Month	:	1994/00
Meeting title	:
Held date	:
Location (city)	:
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/0168-583X(94)96280-4
DOI for research data	:
Keywords	:	-SiC; Implantation; Ion; Ni; Thermal Annealing
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:43.35 Category:Instruments & Instrumentation
Altmetrics	:

Registration No. : A19930523
JAEA Abstracts No. : 220539
Paper Submission No. : 12509

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.