Depth profile of trapped charges in oxide layer of 6H-SiC metal-oxide-semiconductor structures

Yoshikawa, Masahito; not registered; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Yoshida, Sadafumi*; Okumura, Hajime*; Takahashi, Yoshihiro*; Onishi, Kazunori*

no abstracts in English

Language	:	English
Journal	:	Journal of Applied Physics
Volume	:	80
Number	:	1
Pages	:	p.282 - 287
Publication Year/Month	:	1996/07
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Paper URL	:	https://doi.org/10.1063/1.362817
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	固定電荷; 界面準位; 傾斜エッチング; C-V特性; MOS構造; 6H-SiC; Depth Profile
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Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:69.98 Category:Physics, Applied
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Registration No. : A19960068
JAEA Abstracts No. : 240761
Paper Submission No. : 14184

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