Electron irradiation effects on CVD-grown 3C-SiC epilayers

Ito, Hisayoshi; Yoshikawa, Masahito; Nashiyama, Isamu*; not registered; Okumura, Hajime*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Amorphous and Crystalline Silicon Carbide III and Other Group IV-IV Materials
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Pages	:	p.143 - 148
Publication Year/Month	:	1992/00
Meeting title	:	3rd Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials
Held date	:	1990/04
Location (city)	:	America
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Patent information	:
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DOI for research data	:
Keywords	:	シリコンカーバイド; 電子線照射; キャリア濃度; 移動度; 耐放射線性
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Registration No. : B19900027
JAEA Abstracts No. : 210212
Paper Submission No. : 11567

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