Gamma-ray irradiation effects on cubic silicon carbide metal-oxide-semiconductor structure

Yoshikawa, Masahito; Morita, Yosuke; Ito, Hisayoshi; Nashiyama, Isamu*; not registered; Okumura, Hajime*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Amorphous and Crystalline Silicon Carbide IV
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Pages	:	p.393 - 398
Publication Year/Month	:	1992/00
Meeting title	:	4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials
Held date	:	1991/10
Location (city)	:	America
Location (country)	:
Patent information	:
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Paper URL	:
DOI for research data	:
Keywords	:	3C-SiC; 3C-SiC MOS構造; 界面準位発生量; 固定電荷蓄積量; 高周波C-V特性
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Registration No. : B19910209
JAEA Abstracts No. : 210295
Paper Submission No. : 11619

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