Electronic structure of N $_{2+}$ and O $_{2+}$ ion-implanted Si(100)

Yamamoto, Hiroyuki; Baba, Yuji ; Sasaki, Teikichi

no abstracts in English

Language	:	English
Journal	:	Surface and Interface Analysis
Volume	:	23
Number	:
Pages	:	p.381 - 385
Publication Year/Month	:	1995/00
Meeting title	:	5th Conf. of Surface and Interface Analysis
Held date	:	1993/10
Location (city)	:	Italy
Location (country)	:
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1002/sia.740230607
DOI for research data	:
Keywords	:	イオン注入; 表面電子構造; X線光電子分光法; X線励起オージェ電子分光法; X線吸収端微細構造法; SiO $_{2}$ ; Si $_{3}$ N $_{4}$
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:53.88 Category:Chemistry, Physical
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Registration No. : B19930115
JAEA Abstracts No. : 230738
Paper Submission No. : 13305

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Electronic structure of N and O ion-implanted Si(100)

Electronic structure of N $_{2+}$ and O $_{2+}$ ion-implanted Si(100)