Thermal annealing effects on build-up of oxide trapped charge in -ray irradiated 3C-SiC MOS structure

Nemoto, Norio*; Yoshikawa, Masahito; Nashiyama, Isamu; Yoshida, Sadafumi*; Onishi, Kazunori*

no abstracts in English

Language	:	Japanese
Journal	:	Heisei-5-Nendo (Dai-37-Kai) Nihon Daigaku Riko Gakubu Gakujutsu Koenkai Koen Rombunshu; Zairyo, Bussei
Volume	:
Number	:
Pages	:	p.149 - 150
Publication Year/Month	:	1993/00
Meeting title	:	日本大学理工学部学術講演会
Held date	:	1993/11
Location (city)	:	船橋
Location (country)	:
Patent information	:
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DOI for research data	:
Keywords	:	3C-SiC; MOS構造; 固定電荷; 等時アニール; 化学反応速度式; 活性化エネルギー; 線
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Registration No. : B19930855
JAEA Abstracts No. : 220076
Paper Submission No. : 12157

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