Effects of gamma-ray irradiation on formation of oxide-trapped charges in SiC MOS capacitors

Yoshikawa, Masahito; Ito, Hisayoshi; Oshima, Takeshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

no abstracts in English

Language	:	English
Journal	:	Silicon Carbide and Related Materials 1995 (Institute of Physics Conf. Series,No. 142)
Volume	:
Number	:
Pages	:	p.741 - 744
Publication Year/Month	:	1996/00
Meeting title	:	6th International Conference on Silicon Carbide and Related Materials (ICSCRM 1995)
Held date	:	1995/09
Location (city)	:	Kyoto
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	6H-SiC; 3C-SiC; MOS; キャパシタ; C-V特性; 照射; ガンマ線
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : B19950871
JAEA Abstracts No. : 47000940
Paper Submission No. : 21579

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.