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Report No.

Depth profile of oxide-trapped charges in 6H-SiC metal-oxide-semiconductor structures irradiated with gamma-rays

Yoshikawa, Masahito; not registered; Oshima, Takeshi; Ito, Hisayoshi; Nashiyama, Isamu; Okumura, Hajime*; Yoshida, Sadafumi*

no abstracts in English



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