O reaction dynamics with Si(001) surfaces as observed by synchrotron radiation photoemission spectroscopy

Teraoka, Yuden; Yoshigoe, Akitaka 

The translational kinetic energy of incident molecules is an important factor for the induction of surface reactions. We applied supersonic seed molecular beam techniques and high-energy-resolution photoemission spectroscopy using synchrotron radiation to the Si initial oxidation analysis. We have already found out that the saturated oxygen coverage on HO-chemisorbed Si(001) surfaces depends on the O incident energy. Two potential energy barriers were confirmed in accordance with the first-principles calculation. An action of the incident energy should be confirmed also on clean Si(001) surfaces. Therefore, the incident energy dependence of the O dissociative chemisorption on the clean Si(001) surface has been investigated by photoemission spectroscopy for Si-2p and O-1s core levels to make clear how the incident energy affects the ultra-thin oxide-layers formation.