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Report No.

${it In situ}$ analysis using high resolution synchrotron radiation photoemission spectroscopy for initial oxidation of H$$_{2}$$O pre-adsorbed Si(001) surfaces induced by supersonic O$$_{2}$$ molecular beams at room temperature

Yoshigoe, Akitaka ; Teraoka, Yuden

The oxidation states up to Si$$^{4+}$$ states were formed when the translational kinetic energy of O$$_{2}$$ was 3.0 eV. The time evolustions of each Si oxidation states were in situ measured by using the high resolution photoemission spectroscopy.The translational kinetic energy of 3.0eV randomly enhanced the oxidation on Si(001) surface up to the second layer Si backbonds. It was found that the Si$$^{4+}$$ was not observed, thus the dimer Si atoms at the top layer was not surrounded by four oxygen atoms at the initial oxidation stage.



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