1MeV-electron irradiation induced defects in epitaxially grown 3C-SiC

Ito, Hisayoshi; Hayakawa, Naohiro; Nashiyama, Isamu*; not registered

no abstracts in English

Language	:	English
Report No.	:	JAERI-M 89-094
Pages	:	13 Pages
Publication Year/Month	:	1989/07
Patent information	:
PDF	:	JAERI-M-89-094.pdf:0.45MB
Paper URL	:	https://doi.org/10.11484/jaeri-m-89-094
Keywords	:	化学気相成長; 立方晶シリコンカーバイド; 電子スピン共鳴; 常磁性欠陥; アニール過程; 電子線照射
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Registration No. : M19890094
JAEA Abstracts No. :

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