Evaluation of number of hole-electron pairs induced by irradiation in silicon-nitride layers and analysis of charge trapping mechanisms in metal-insulator-semiconductor structure with silicon-nitride layers

Onishi, Kazunori*; Takahashi, Yoshihiro*; not registered; Yoshikawa, Masahito

no abstracts in English

Language	:	Japanese
Report No.	:	JAERI-Research 95-090
Pages	:	40 Pages
Publication Year/Month	:	1996/01
Patent information	:
PDF	:	JAERI-Research-95-090.pdf:1.41MB
Paper URL	:	https://doi.org/10.11484/jaeri-research-95-090
Keywords	:	シリコン窒化膜; 線; 電子正孔対; 電荷発生量; MIS構造; MNOS構造; 電荷捕獲; ミッドギャップ電圧
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Registration No. : S19950090
JAEA Abstracts No. : 240221

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