Annealing of vacancy-type defect and diffusion of implanted boron in 6H-SiC

Oshima, Takeshi; Uedono, Akira*; Eryu, Osamu*; Lee, K. K.; Abe, Koji*; Ito, Hisayoshi; Nakashima, Kenshiro*

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	433-436
Number	:
Pages	:	p.633 - 636
Publication Year/Month	:	2003/08
Meeting title	:	European Conference on Silicon Carbide and Related Materials (ECSCRM2002)
Held date	:	2002/09
Location (city)	:	Linkping
Location (country)	:	Sweden
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	SiC; イオン注入; B拡散; 空孔型欠陥
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
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Accesses	:	- Accesses
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Registration No. : B20021092
JAEA Abstracts No. : 310742
Paper Submission No. : 20255

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