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Report No.

Annealing of vacancy-type defect and diffusion of implanted boron in 6H-SiC

Oshima, Takeshi; Uedono, Akira*; Eryu, Osamu*; Lee, K. K.; Abe, Koji*; Ito, Hisayoshi; Nakashima, Kenshiro*

no abstracts in English



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