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Report No.

Radiation curing of polyvinylsilane as a precursor for SiC-based material

Idesaki, Akira; Sugimoto, Masaki; Tanaka, Shigeru; Narisawa, Masaki*; Okamura, Kiyohito*; Ito, Masayoshi*

Polyvinylsilane (PVS), a liquid organosilicon polymer at room temperature, is expected to be used as a precursor for SiC product with minute and complex shape. In the synthesis of the SiC product, it is necessary to cure the polymer in order to retain the shape during the pyrolysis. We have used a radiation for curing of the PVS. However, there is a problem that the PVS foams during electron beam irradiation at room temperature. In this report, the curing of PVS by $$gamma$$-ray irradiation was examined, and effect of irradiation temperature was studied in order to find out conditions that prevent the foaming of PVS. It was found that the PVS is cured without foaming by the $$gamma$$-ray irradiation in both cases of the irradiation temperature at liquid nitrogen temperature (77K) and at room temperature. From the results of measurement of gel fraction and TGA, it was found that the PVS is cured more efficiently by the irradiation at room temperature than at 77K.



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