Effect of 3 MeV electron irradiation on the photoluminescence properties of Eu-doped GaN

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi

Eu-doped GaN samples were irradiated with 3MeV-electrons at RT at 10 $^{16}$ - 3x10 $^{17}$ /cm $^{2}$ . Photoluminescence (PL) propeties related to $^{5}$ D $_{0}$ - $^{7}$ F $_{2}$ in Eu were studied using He-Cd laser as excitation source. As the results, it is found that PL intensity is not affected by electron irradiation.Considering that PL peak related to near-band-edge strongly decreases due to electron irradiation, we can conclude that PL related to $^{5}$ D $_{0}$ - $^{7}$ F $_{2}$ in Eu has very strong radiation resistance.

Language	:	English
Journal	:	Applied Physics Letters
Volume	:	81
Number	:	11
Pages	:	p.1943 - 1945
Publication Year/Month	:	2002/09
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Paper URL	:	https://doi.org/10.1063/1.1504873
DOI for research data	:	Link to research data related to this paper/report.
Keywords	:	EuドープGaN; 電子線照射; フォトルミネッセンス
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Cooperating Institute	:	豊橋技術科学大学

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Registration No. : A20020452
JAEA Abstracts No. : 47000008
Paper Submission No. : 20701

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