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Report No.

Synthesis of sulfur-doped TiO$$_{2}$$ by ion implantation

Umebayashi, Tsutomu; Yamaki, Tetsuya; Yamamoto, Shunya; Tanaka, Shigeru; Asai, Keisuke*

TiO$$_{2}$$ is promising as a photocatalytic material. However, it is active only under UV light irradiation because of its wide band gap ($$sim$$3.0 eV). We recently reported that sulfur (S) doping caused the optical absorption edge of TiO$$_{2}$$ to be shifted into the lower energy region. Based on the theoretical analyses using first principles band calculations, mixing of the S 3p states with the valence band was found to contribute to the bandgap narrowing. In this study presented here, S-doped TiO$$_{2}$$ was prepared by ion implantation and subsequent thermal annealing. S$$^{+}$$ was implanted into the single crystals of rutile TiO$$_{2}$$ with a fluence of 8 $$times$$ 10$$^{15}$$ ions/cm$$^{2}$$. According to the results of RBS/channeling analysis, irradiation damage recovered after the annealing at 600 $$^{circ}$$C in air. In the annealed crystal, S atoms occupied O sites to form Ti-S bonds, as assessed by XPS.



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