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Electrical characteristics of interface defects in oxides grown at 1200 $$^{circ}$$C in dry oxygen ambient on silicon carbide and their thermal annealing effects

Yoshikawa, Masahito; Ishida, Yuki*; Jikimoto, Tamotsu*; Hijikata, Yasuto*; Ito, Hisayoshi; Okumura, Hajime*; Takahashi, Tetsuo*; Tsuchida, Hidekazu*; Yoshida, Sadafumi*

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