Two-dimensional X-ray focusing by crystal bender and mirrors

Yoneda, Yasuhiro   ; Matsumoto, Norimasa; Furukawa, Yukito*; Ishikawa, Tetsuya*

Results are reported on the performance of a fixed height exit bender with an unribbed silicon (311) crystal. The anticlasic crveture can be minimized for a recutangular Si (311) focusing crystal with "clamped" or "builtin" boundary conditions if the length to width ratio of the crystal is 1.42. The test crystal used in this study was manufactured from a 98mm90mm2mm dimension of float zone silicon. After final etching, the ratio of the crystal is 1.435. The sub-millimeter sagittal focusing was achieved by using a 4-point bending mechanism in energy ranges from 30keV to 60keV.