Effects of Al composition on luminescence properties of europium implanted AlGaN(0x1)

Nakanishi, Yasuo*; Wakahara, Akihiro*; Okada, Hiroshi*; Yoshida, Akira*; Oshima, Takeshi; Ito, Hisayoshi; Shibata, Tomohiko*; Tanaka, Mitsuhiro*

In our previous study, it was reported that Eu-doped Nitride semiconductors show luminescence propetires. In this study, we investigate the relationship between luminescence properties and Al composition using AlGaN(0x1). AlGaN were grown using OMVPE. Eu atoms were doped into the samples by ion implantation (200keV). After implantation, the samples were annealed to remove residual damege. Luminescence propreties of the samples were measured using photoluminescence and cathodeluminescence. As a result, luminescence at 621 nm which relates 4f-4f transition were observed for all samples (x=0 to 1). As for intensity, samples with x=0.5 show the strongest luminescence. This result can be interpreted in terms of the internal stress of crystals by the existence of Al atoms.