Bandgaps of Ga $_{1-x}$ InN by all-electron GWA calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

The electronic band-structures of wurtzite-type Ga $_{1-x}$ InN are calculated by using an all-electron FLAPW method in the approximation(GWA). Our calculations show that the bandgap of InN is smaller than 1 eV, and strongly support the recently observed smaller bandgaps.

Language	:	English
Journal	:	Physica Status Solidi (C)
Volume	:	0
Number	:	7
Pages	:	p.2733 - 2736
Publication Year/Month	:	2003/12
Meeting title	:	5th International Conference on Nitride Semiconductors (ICNS-5)
Held date	:	2003/05
Location (city)	:	Nara
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1002/pssc.200303278
DOI for research data	:
Keywords	:	InN; GaN; バンド計算; GW計算; バンドギャップ
Research Facility	:	SPring-8(大型放射光施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	筑波大学; 東京理科大学

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Registration No. : B20030358
JAEA Abstracts No. : 320052
Paper Submission No. : 20602

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Bandgaps of GaInN by all-electron GWA calculation

Bandgaps of Ga $_{1-x}$ InN by all-electron GWA calculation