Study of the oxidation for Si nanostructures using synchrotron radiation photoemission spectroscopy

Nath, K. G.; Shimoyama, Iwao   ; Sekiguchi, Tetsuhiro  ; Baba, Yuji  

Here we report oxidization properties of Si nanostructures grown on graphite. Si 1s X-ray photoemission spectra using synchrotron radiation are used in order to understand the oxidization pathways. Several Si films, such as 0.4, 2, 5.5 & Aring; were grown on highly oriented pyrolitic graphite (HOPG). In the case of a 0.4 & Aring; Si on HOPG, where different types of Si nanostructures in the form of nanoclusters are present, oxygen reactivity is nearly zero. In contrast, the thick film (5.5 & Aring;), where a bulk-type phase is present, shows a higher degree of reactivity. The results are discussed on the basis of nanostructure geometry, number of constituting Si atoms and cluster size.