Investigation of SiO/SiC interface using positron annihilation technique

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Ichimiya, Ayahiko

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	457-460
Number	:	Part2
Pages	:	p.1301 - 1304
Publication Year/Month	:	2004/06
Meeting title	:	International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM 2003)
Held date	:	2003/10
Location (city)	:	Lyon
Location (country)	:	France
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Keywords	:	陽電子消滅法; Sパラメータ; 界面準位; SiC; MOS
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Registration No. : B20030988
JAEA Abstracts No. : 320691
Paper Submission No. : 21123

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