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EPR studies of the isolated negatively charged silicon vacancies in ${it n}$-type 4${it H}$- and 6${it H}$-SiC; Identification of ${it C}$$$_{3v}$$ symmetry and silicon sites

Mizuochi, Norikazu*; Yamasaki, Satoshi*; Takizawa, Haruki; Morishita, Norio; Oshima, Takeshi; Ito, Hisayoshi; Isoya, Junichi*

Isolated silicon vacancies with negative charge (V$$_{Si}$$$$^{-}$$) in 4H- and 6H-SiC were studied using EPR. The samples used in this study were irradiated with electron at 3 MeV at RT. After irradiation, the samples were annealed at 300 $$^{circ}$$C in Ar to eliminate C-related isolated vacancies. As the result of $$^{13}$$C hyperfine spectra, two kinds of V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) were distinguished and they are assigned to be arising from hexagonal and cubic sites of Si. In addition, both V$$_{Si}$$$$^{-}$$(I) and V$$_{Si}$$$$^{-}$$(II) signals have C$$_{3v}$$ symmetry, which means nearest-neighbor carbon atoms silightly distorted from a regular tetrahedron.

Language

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English

Journal

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Physical Review B

Volume

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68

Number

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16

Pages

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p.165206_1 - 165206_11

Publication Year/Month

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2003/10

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Held date

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Location (city)

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Location (country)

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Patent information

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PDF

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Paper URL

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https://doi.org/10.1103/PhysRevB.68.165206

DOI for research data

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Keywords

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4H-, 6H-SiC; EPR; 電子線照射; 負帯電Si空孔; C$$_{3v}$$対称

Research Facility

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Press Release

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Article of JAEA R&D Review

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Cooperating Institute

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筑波大学

Accesses

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- Accesses

InCites™

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Percentile:82.89

Category:Materials Science, Multidisciplinary

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