EPR and pulsed ENDOR study of EI6 and related defects in 4-SiC

Umeda, Takahide*; Ishitsuka, Yuya*; Isoya, Junichi*; Morishita, Norio; Oshima, Takeshi; Kamiya, Tomihiro

EPR/pulsed-ENDOR study of silicon antisite defects in p- and n-type 4-SiC, which were generated by high-temperature (800 C) electron irradiation. For this type of defects, only a positively-charged state (Si) in p-type 4-SiC has been observed so far; however, we found a new signal in n-type 4-SiC, which was most likely to be assigned to a negatively-charged silicon antisite (Si). Both silicon antisite signals in p- and n-type samples showed a large variation in Si hyperfine (HF) interactions with decreasing the temperature. This indicates the presence of a large structural relaxation surrounding the defect.