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High-quality single crystal growth of UGe$$_2$$ and URhGe

Yamamoto, Etsuji ; Haga, Yoshinori ; Matsuda, Tatsuma; Ikeda, Shugo; Inada, Yoshihiko*; Settai, Rikio*; Onuki, Yoshichika*

We searched for an experimental condition of crystal growth for a ferromagnetic superconductors of UGe$$_2$$ and URhGe. Samples were prepared for both polycrystalline and single crystals, which were arc-melted and grown by the Czochralski-pulling method in a tetra-arc furnace, respectively. Annealing is an important process to enhance sample-quality, namely the residual resistivity ratio. We tried to anneal the samples under various temperatures, which were wrapped by the Ta-foil and vacuum-sealed in the quartz ample, together with the solid state electrotransport method in ultra-high vacuum. The highest residual resistivity ratio was 900 for UGe$$_2$$ and 41 for URhGe.

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Category:Materials Science, Multidisciplinary

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