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Characterization of interface defects related to negative-bias temperature instability in ultrathin plasma-nitrided SiON/Si$$<$$100$$>$$ systems

Fujieda, Shinji*; Miura, Yoshinao*; Saito, Motofumi*; Teraoka, Yuden; Yoshigoe, Akitaka 

To characterize the interface defects that are responsible for the negative-bias temperature instability (NBTI) of a thin plasma-nitrided SiON/Si system, we carried out inerface trap density measurements, electron-spin resonance spectroscopy and synchrotron radiation XPS. The NBTI was shown to occur mainly through the dehydrogenation of the interfacial Si dangling bonds (P$$_{b}$$ defects). Although we suggest that non- P$$_{b}$$ defects are also generated by the negative-bias temperature stress, nitrogen dangling bonds do not seem to be included. The plasma-nitridation process was confirmed to generate sub-oxides at the interface and thus increase the interface trap density. Furthermore, it was found that the nitridation induces another type of P$$_{b1}$$ defect than that at pure-SiO$$_{2}$$/Si interfacec. Such an increase and structural change of the interfacial defects are likely the causes of the nitridation-enhanced NBTI.

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Category:Engineering, Electrical & Electronic

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