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Report No.
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Effects of high-energy ion irradiation in bismuth thin films at low temperature

Chimi, Yasuhiro; Ishikawa, Norito   ; Iwase, Akihiro*

We have studied high-energy ion irradiation effects in bismuth by measuring the electrical resistivity at low temperature in relation to its structural change. Bismuth thin films (300-600 $AA  thick) are irradiated below $sim$$10 K with several kinds of energetic (100-200 MeV) heavy ions. The resistivity of the specimen is measured in-situ at $$sim$$7 K during irradiation. After irradiation, annealing behavior of the resistivity is observed up to $$sim$$35 K. The temperature dependence of the resistivity during annealing shows an abrupt increase around 20 K, implying re-crystallization of irradiation-induced amorphous region. Since amorphous bismuth also shows a superconducting transition below $$sim$$6 K, high-density electronic excitation due to energetic heavy-ion irradiation may induce columnar region of superconducting amorphous bismuth in normal crystalline bismuth. We are trying to detect the superconducting transition as a result of irradiation-induced amorphization.

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