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Report No.

Undoped-type InSb radiation detector with rapid rise time

Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya  ; Katagiri, Masaki

We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.



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