Undoped-type InSb radiation detector with rapid rise time

Hishiki, Shigeomi*; Kanno, Ikuo*; Sugiura, Osamu*; Murase, Yasuhiro*; Nakamura, Tatsuya ; Katagiri, Masaki

We fabricated the schottkey-type InSb semiconductor radiation detector using an undoped InSb substrate, and evaluated the charactersitics of the alpha particle detection. The InSb detectors detected alphar particles successfully at all the tested temperature from 4.2 to 115 K. The 10-to-90% rise times of the preamplifier outputs were about 350 nsec regardless of the operating temperature. These fast rise times were about 20 times improved comparing to those from p-type InSb semiconductor detector.

Language	:	English
Journal	:	Radiation Detectors and Their Uses
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Pages	:	p.113 - 117
Publication Year/Month	:	2003/00
Meeting title	:	第17回「放射線検出器とその応用」研究会
Held date	:	2003/02
Location (city)	:	つくば
Location (country)	:	日本
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DOI for research data	:
Keywords	:	InSb; Semiconductor Detector; Undoped-type; Alpha Detection; Fast Rise Time
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Registration No. : B20031648
JAEA Abstracts No. : 320586
Paper Submission No. : 21034

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