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Band structures of Wurtzite InN and Ga$$_{1-x}$$In$$_x$$N by all-electron $$GW$$ calculation

Usuda, Manabu; Hamada, Noriaki*; Shiraishi, Kenji*; Oshiyama, Atsushi*

We report first-principles electronic band-structure calculations of InN by using the all-electron full-potential linearized augmented-plane-wave (FLAPW) method in the $$GW$$ approximation (GWA), and provide the reliable theoretical bandgap of InN. Our calculation suggests that InN is a narrow-gap semiconductor and strongly supports the recently reported smaller bandgaps.

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Category:Physics, Applied

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