Recrystallization behavior in SiC amorphized with He or Ne irradiation

Aihara, Jun ; Hojo, Tomohiro*; Furuno, Shigemi*; Ishihara, Masahiro ; Sawa, Kazuhiro; Yamamoto, Hiroyuki; Hojo, Kiichi

Silicon carbide (SiC) specimens prepared for the TEM (transmission electron microscope) observation were amorphized with 30keV Ne or 4.5keV He ion irradiation at room temperature and successively annealed at 1273K in the TEM. Ne and He were selected as irradiation ion species to change the concentration of implanted rare gas atoms. The energy and flux of these ion species were selected in order to get similar dpa depth profiles and dpa rates based on TRIM calculation. In this condition, peak ion implantation of He was estimated to be about 5 times as large as that of Ne for the same peak dpa. Crystal nucleation occurred with annealing in the specimen irradiated with He up to 6.3dpa(peak), however, no crystal nucleation was observed in the specimen irradiated with Ne up to 15dpa(peak); Namely, crystal nucleation occurred with less dpa in the case of He irradiation than in the case of Ne irradiation. It was found that the concentration of implanted inert gas atom influences the crystal nucleation behavior.