Structural defects in SiO/SiC interface probed by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Chen, Z. Q.; Yoshikawa, Masahito; Suzuki, Ryoichi*; Odaira, Toshiyuki*

no abstracts in English

Language	:	English
Journal	:	Applied Surface Science
Volume	:	244
Number	:	1-4
Pages	:	p.322 - 325
Publication Year/Month	:	2005/05
Meeting title	:	12th International Conference on Solid Films and Surfaces (ICSFS-12)
Held date	:	2004/06
Location (city)	:	Hamamatsu
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.apsusc.2004.10.085
DOI for research data	:
Keywords	:	低速陽電子ビーム; SiO/SiC界面; 構造欠陥; ドップラー幅拡がり測定; 陽電子消滅寿命測定
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Article of JAEA R&D Review	:
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InCites™	:	Percentile:49.98 Category:Chemistry, Physical
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Registration No. : B20040141
JAEA Abstracts No. : 330409
Paper Submission No. : 21741

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