Microstructural change with annealing of SiC irradiated with Ne at 573-673 K

Aihara, Jun ; Hojo, Kiichi; Furuno, Shigemi*; Shimura, Kenichiro; Hojo, Tomohiro*; Sawa, Kazuhiro; Yamamoto, Hiroyuki; Motohashi, Yoshinobu*

no abstracts in English

Language	:	English
Journal	:	Nuclear Instruments and Methods in Physics Research B
Volume	:	242
Number	:	1-2
Pages	:	p.441 - 444
Publication Year/Month	:	2006/01
Meeting title	:	14th International Conference on Ion Beam Modification of Materials (IBMM 2004)
Held date	:	2004/09
Location (city)	:	Monterey
Location (country)	:	U. S. A.
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.nimb.2005.08.043
DOI for research data	:
Keywords	:	SiC; 照射; 非晶質; 結晶核生成
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:12.86 Category:Instruments & Instrumentation
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Registration No. : B20040676
JAEA Abstracts No. : 34000099
Paper Submission No. : 248

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