Hydrogen bubble formation in H-implanted ZnO studied using a slow positron beam

Chen, Z. Q.; Maekawa, Masaki; Kawasuso, Atsuo; Yamamoto, Shunya; Yuan, X. L.*; Sekiguchi, Takashi*; Suzuki, Ryoichi*; Odaira, Toshiyuki*

20-80 keV hydrogen ions were implanted into ZnO single crystals up to a total dose of 4.410 $^{15}$ cm $^{-2}$ . Positron annihilation measurements using a slow positron beam revealed introduction of vacancies after implantation, which are filled with hydrogen impurities. After annealing, these hydrogen filled vacancies grow into large hydrogen bubbles. At annealing temperature of 500-700 $^{circ}$ C, these hydrogen impurities are released from the bubbles, and remain open microvoids. These microvoids are finally annealed out at about 1100 $^{circ}$ C. The effects of hydrogen implantation on the light luminescence in ZnO will also be discussed.

Language	:	English
Journal	:	JAERI-Review 2004-025, TIARA Annual Report 2003
Volume	:
Number	:
Pages	:	p.193 - 195
Publication Year/Month	:	2004/11
Meeting title	:	第13回TIARA研究発表会
Held date	:	2004/06
Location (city)	:	高崎
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://jopss.jaea.go.jp/pdfdata/JAERI-Review-2004-025-p0117-p0247.pdf
DOI for research data	:
Keywords	:	陽電子消滅; 陽電子ビーム; 酸化亜鉛; イオン注入; 格子欠陥
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : B20040433
JAEA Abstracts No. :
Paper Submission No. : 1192

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.