Transient currents induced in MOS capacitors by ion irradiation; Influence of incident angle of ions and device temperature

Yamakawa, Takeshi; Hirao, Toshio; Abe, Hiroshi; Onoda, Shinobu; Wakasa, Takeshi; Shibata, Toshihiko*; Kamiya, Tomihiro

no abstracts in English

Language	:	English
Journal	:	JAERI-Review 2004-025, TIARA Annual Report 2003
Volume	:
Number	:
Pages	:	p.19 - 20
Publication Year/Month	:	2004/11
Meeting title	:	第13回TIARA研究発表会
Held date	:	2004/06
Location (city)	:	高崎
Location (country)	:	日本
Patent information	:
PDF	:
Paper URL	:	https://jopss.jaea.go.jp/pdfdata/JAERI-Review-2004-025-p0001-p0116.pdf
DOI for research data	:
Keywords	:	SOI; MOSキャパシタ; シングルイベント耐性; 照射中温度; 重イオンマイクロビーム; 入射角
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

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Registration No. : B20040545
JAEA Abstracts No. :
Paper Submission No. : 25909

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