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Synthesis of Al$$_{x}$$Ga$$_{1-x}$$N alloy by solid-phase reaction under high pressure

固相反応によるAl$$_{x}$$Ga$$_{1-x}$$N半導体合金の高温高圧合成

齋藤 寛之; 内海 渉; 金子 洋*; 青木 勝敏

Saito, Hiroyuki; Utsumi, Wataru; Kaneko, Hiroshi*; Aoki, Katsutoshi

バルクのAl$$_{x}$$Ga$$_{1-x}$$N半導体合金をすべての組成領域にわたり高温高圧下で固相反応によって合成した。その場X線回折実験により6GPa, 800$$^{circ}$$Cの条件で合金化が開始することを観察した。回収試料のSEM観察及び粉末X線回折実験から、Ga原子とAl原子の均一な分布と、組成に対する格子定数の連続的な変化を確認したが、これはAlNとGaNの固溶体が任意組成で形成されていることを示している。

Bulk specimens of Al$$_{x}$$Ga$$_{1-x}$$N alloys covering a composition range of 0$$leq$$${it x}$$$leq$$1 were synthesized by a solid-phase reaction under high pressure. ${it In situ}$ X-ray diffraction profiles were measured to observe the alloying process, which began at around 800$$^{circ}$$C under 6.0 GPa. SEM observation and X-ray analysis of the recovered specimen indicated a uniform distribution of Al and Ga and continuous variations of the lattice constants against the composition, which implies that a solid solution of AlN and GaN is formed regardless of atomic composition.

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パーセンタイル:20.72

分野:Physics, Applied

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