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Electronic excitations in hole-doped La$$_{1-x}$$Sr$$_{x}$$MnO$$_{3}$$ studied by resonant inelastic X-ray scattering

Ishii, Kenji; Inami, Toshiya; Owada, Kenji; Kuzushita, Kaori; Mizuki, Junichiro; Murakami, Yoichi; Ishihara, Sumio*; Endo, Yasuo*; Maekawa, Sadamichi*; Hirota, Kazuma*; Moritomo, Yutaka*

We have studied electronic excitations of hole-doped manganese oxides La$$_{1-x}$$Sr$$_x$$MnO$$_3$$ ($$x=0.2$$ and $$0.4$$) by resonant inelastic X-ray scattering at Mn K absorption edge. We observed in the excitation spectra that the Mott gap of La$$_{0.6}$$Sr$$_{0.4}$$MnO$$_{3}$$ was filled by hole-doping. In La$$_{0.8}$$Sr$$_{0.2}$$MnO$$_{3}$$, which shows a metal-insulator transition, we found that temperature dependence of scattering intensity is different between two scattering vectors. It may reflects a anisotropic electronic structure which originates from the orbital degrees of freedom in manganese oxides.

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Category:Chemistry, Multidisciplinary

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