Characterizatin of Au Schottky contacts on p-type 3C-SiC grown by low pressure chemical vapor deposition

Kojima, Kazutoshi; Yoshikawa, Masahito; Oshima, Takeshi; Ito, Hisayoshi; Okada, Sohei

no abstracts in English

Language	:	English
Journal	:	Materials Science Forum
Volume	:	338-342
Number	:
Pages	:	p.1239 - 1242
Publication Year/Month	:	2000/00
Meeting title	:	International Conference on Silicon Carbide and Related Materials 1999 (ICSCRM '99)
Held date	:	1999/10
Location (city)	:	USA
Location (country)	:	USA
Patent information	:
PDF	:
Paper URL	:
DOI for research data	:
Keywords	:	p型3C-SiC; 減圧CVD法; ショットキー接合; ショットキー障壁
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:
Altmetrics	:

Registration No. : B19991182
JAEA Abstracts No. : 280681
Paper Submission No. : 17639

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.