The Degradation of the electrical properties of IGBTs by 2-MeV electron irradiation at high-temperatures

Nakabayashi, Masakazu*; Oyama, Hidenori*; Hanano, N.*; Hirao, Toshio; Simoen, E.*; Claeys, C.*

no abstracts in English

Language	:	English
Journal	:	Proceedings of the 6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6)
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Pages	:	p.183 - 186
Publication Year/Month	:	2004/10
Meeting title	:	6th International Workshop on Radiation Effects on Semiconductor Devices for Space Application (RASEDA-6)
Held date	:	2004/10
Location (city)	:	Tsukuba
Location (country)	:	Japan
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DOI for research data	:
Keywords	:	IGBT; 電子線照射; 照射温度; 温度依存性; 放射線劣化
Research Facility	:
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:	熊本電波工業高等専門学校

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Registration No. : B20041352
JAEA Abstracts No. : 48000078
Paper Submission No. : 22441

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