Microvoid formation in hydrogen-implanted ZnO probed by a slow positron beam

Chen, Z. Q.; Kawasuso, Atsuo; Xu, Y.; Naramoto, Hiroshi*; Yuan, X. L.*; Sekiguchi, Takashi*; Suzuki, Ryoichi*; Odaira, Toshiyuki*

ZnO crystals were implanted with 20-80 keV hydrogen ions up to a total dose of 4.410 $^{15}$ cm $^{-2}$ . Positron annihilation measurements show introduction of zinc vacancies, which are filled with hydrogen atoms. After isochronal annealing at 200-500 $^{circ}$ C, the vacancies agglomerate into hydrogen bubbles. Further annealing at 600-700 $^{circ}$ C causes release of hydrogen out of the bubbles, leaving large amount of microvoids. These microvoids are annealed out at high temperature of 1000 $^{circ}$ C. Cathodoluminescence measurements reveal that hydrogen ions also passivate deep level emission centers before their release from the sample, and lead to the improvement of the UV emission.

Language	:	English
Journal	:	Physical Review B
Volume	:	71
Number	:	11
Pages	:	p.115213_1 - 115213_8
Publication Year/Month	:	2005/03
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Paper URL	:	https://doi.org/10.1103/PhysRevB.71.115213
DOI for research data	:
Keywords	:	陽電子消滅; 低速陽電子ビーム; 酸化亜鉛; イオン注入; 格子欠陥
Research Facility	:	TIARA(イオン照射研究施設)
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InCites™	:	Percentile:93.71 Category:Materials Science, Multidisciplinary
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Registration No. : A20040536
JAEA Abstracts No. : 330384
Paper Submission No. : 21724

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