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Synchrotron radiation photoemission spectroscopy for chemical bonding of N atoms in oxynitride films formed at SiO$$_{2}$$/Si(001) by N$$^{+}$$ beam irradiation

Hachiue, Shunsuke; Teraoka, Yuden

Silicon oxynitride layers were formed by irradiation of nitrogen ion beams at silicon substrates with ultrathin oxide layers. The nitrogen beam was mass-selected N$$^{+}$$ ion beam. The translational kinetic energy was about 3 keV. The dose was 6.3$$times$$10$$^{14}$$ ions/cm$$^{2}$$. This value is almost equal to the atom density at the Si(001) surface. Chemical bonding states of irradiated nitrogen atoms were analyzed by photoemission spectroscopy with synchrotron radiation. Although the nitrogen dose was a low density, N-1s photoemission spectra could be deconvoluted into four peaks. The chemical bonding state of each peak was assigned with a reference of a oxide layer thickness dependence of the N-1s photoemission peak profile.



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