Matsuda, Tatsuma; Haga, Yoshinori 
; Shishido, Hiroaki*; Ikeda, Shugo; Harima, Hisatomo*; Settai, Rikio*; Onuki, Yoshichika
We have succeeded in growing a high-quality single crystal of ThIn with the cubic structure by the In-flux method and measured the de Haas-van Alphen (dHvA) effect. Several dHvA branches were observed, ranging from 9.0 
10
to 9.37 10
Oe. The experimental results are compared to the dHvA results of CeIn under pressure of 2.7 GPa, together with the results of energy band calculations.
Language |
: | English |
|---|---|---|
Journal |
: | |
Volume |
: | 378-380 |
Number |
: | |
Pages |
: | p.1021 - 1022 |
Publication Year/Month |
: | 2006/05 |
Meeting title |
: | International Conference on Strongly Correlated Electron Systems (SCES 2005) |
Held date |
: | 2005/07 |
Location (city) |
: | Vienna |
Location (country) |
: | Austria |
Paper URL |
: |
|
Keywords |
: | Single Crystal Growth; de Haas-van Alphen Effect; ThIn |
Cooperating Institute |
: |
Accesses |
: |
- Accesses |
|---|---|---|
InCites™ |
: |
Percentile:0 Category:Physics, Condensed Matter |
Altmetrics |
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