Defect layer in SiO-SiC interface proved by a slow positron beam

Maekawa, Masaki; Kawasuso, Atsuo; Yoshikawa, Masahito; Miyashita, Atsumi; Suzuki, Ryoichi*; Odaira, Toshiyuki*

no abstracts in English

Language	:	English
Journal	:	Physica B; Condensed Matter
Volume	:	376-377
Number	:
Pages	:	p.354 - 357
Publication Year/Month	:	2006/04
Meeting title	:	23rd International Conference on Defects in Semiconductors (ICDS-23)
Held date	:	2005/07
Location (city)	:	Awaji
Location (country)	:	Japan
Patent information	:
PDF	:
Paper URL	:	https://doi.org/10.1016/j.physb.2005.12.091
DOI for research data	:
Keywords	:	低速陽電子ビーム; 第一原理計算; SiO/SiC界面; 欠陥構造; 酸素ダングリングボンド; 界面準位量
Research Facility	:	TIARA(イオン照射研究施設)
Press Release	:
Article of JAEA R&D Review	:
Cooperating Institute	:

Accesses	:	- Accesses
Web of Science® Times Cited Count	:	Times Cited Count： If you would like to get the latest times cited, please access the Web of Science®. http://www.webofknowledge.com/wos
InCites™	:	Percentile:12.58 Category:Physics, Condensed Matter
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Registration No. : B20050733
JAEA Abstracts No. : 34000581
Paper Submission No. : 704

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