Single crystal growth and fermi surface properties of ThIn

Matsuda, Tatsuma; Haga, Yoshinori   ; Ikeda, Shugo; Shishido, Hiroaki*; Settai, Rikio*; Harima, Hisatomo*; Onuki, Yoshichika

We have succeeded in growing a high-quality single crystal of ThIn with the cubic structure by the In-flux method and measured the electrical resistivity, magnetic susceptibility and de Haas-van Alphen (dHvA) effect. Several dHvA branches were observed, ranging from 5.2 10 to 1.7 10 Oe. The Fermi surface consists of a nearly spherical Fermi surface and a multiply-connected Fermi surface with many but small extremal cross-sections. The corresponding cyclotron effective masses are small, ranging from 0.31 to 1.4 . These Fermi surface properties are well explained by the energy band calculations based on the FLAPW method.