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Passive oxidation of Si(001) by hyperthermal atomic oxygen beam; A Synchrotron radiation photoemission spectroscopic study

Tagawa, Masahito*; Sogo, Chie*; Miyagai, Suguru*; Yokota, Kumiko*; Yoshigoe, Akitaka ; Teraoka, Yuden

Ultra-thin oxide-layers on Si(001) surfaces, formed by an atomic oxygen beam with hyperthermal incident energy, were analysed by photoemission spectroscopy with synchrotron radiation. The formation of ultra-thin oxide-layers was performed in Kobe University. The photoemission spectroscopy was performed at the surface chemistry experimental station installed in the JAEA soft X-ray beamline in the SPring-8. Comparing the photoemission spectra with those of thermal oxidation with oxygen gas, it was found that a few suboxides were observed in the ultra-thin oxide-layers formed by atomic oxygem beams.

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