Evaluation of SiO $_{2}$ thin films deposited on 4H-SiC(0001) substrates by capacitance-voltage method

Yoshikawa, Masahito; Nakamura, Tomonori*; Miyashita, Atsumi; Onuma, Toshiharu*; Tsuchida, Hidekazu*

no abstracts in English

Language	:	Japanese
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Meeting title	:	SiC及び関連ワイドギャップ半導体研究会第14回講演会
Held date	:	2005/11
Location (city)	:	京都
Location (country)	:	日本
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Keywords	:	no keyword
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Cooperating Institute	:	電力中央研究所

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Registration No. : BB20050279
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Evaluation of SiO thin films deposited on 4H-SiC(0001) substrates by capacitance-voltage method

Evaluation of SiO $_{2}$ thin films deposited on 4H-SiC(0001) substrates by capacitance-voltage method