検索対象:     
報告書番号:
※ 半角英数字
 年 ~ 
 年

研究炉等(JRR-3, JRR-4 and JMTR)を用いた中性子核変換ドーピングSi半導体(NTD-Si)製造機能拡充の検討

Expansion of Neutron-Transmutation-Doped Silicon (NTD-Si) semiconductor productivity using research reactors (JRR-3, JRR-4 and JMTR)

NTD技術検討会

Working Group for NTD Technology

中性子核変換ドーピングSi半導体(NTD-Si)は高性能の電力制御用半導体素子(パワーデバイス)への応用が期待され、ハイブリッド車の増産等に伴い、その需要が急激に増大するものと見込まれる。このような需要増大に対応するため、研究炉等(JRR-3, JRR-4及びJMTR)によるNTD-Si増産の技術的課題を検討し、以下の方策を提案するに至った。(1)JRR-3では、Si照射装置の簡易的な改造で約2倍の増産が見込める外部冷却法の検討を優先的に進める。また、Si照射装置を全自動化する方法を長期的に検討し、約4倍の増産を目指す。(2)JRR-4では、NTD-Si製造量拡大のため、8インチ径に止まらず12インチ径のSiインゴット照射が可能な照射筒の炉心タンク外への設置を優先的に検討する。(3)JMTRでは、8インチ径及び6インチ径用の照射装置を整備して年間約30トンのNTD-Si製造を目指す。上記の提案を実施した場合、NTD-Si製造能力を年間約46トン(現在の生産能力の約10倍)まで高められ、現在の国内需要(年間約90トン)の約50%までの供給を満たすことが可能となる。NTD-SiC半導体を基板とするパワーデバイスはSiデバイスよりさらなる性能向上が見込めることから、SiC半導体のNTD技術については国内の産業界及び研究機関と密接に連携しながら研究開発を進めることが重要である。

Neutron-transmutation-doped silicon (NTD-Si) is regarded as a promising semiconductor for power device application. The demand of NTD-Si is expected to be raised significantly due to mass production of hybrid-cars in the near future. In order to meet the demand, we have investigated the expansion technology of the NTD-Si productivity in the research reactors of JRR-3, JRR-4 and JMTR. We have made out the following proposals. (1) In the JRR-3, the external cooling method should be preferentially developed to be twice the productivity of NTD-Si using a modified Si-irradiation facility, at the first step. At the next step, a full-automatic Si-irradiation facility should be installed to increase the NTD-Si productivity four-times. (2) In the JRR-4, the Si-irradiation facility, by which an Si ingot of 8- and 12-inch in diameter can be irradiated with neutrons, should be designed and installed around the reactor core tank. (3) In the JMTR, the Si-irradiation facilities for 8-inch and 6-inch diameter ingots should be developed for producing NTD-Si of approximately 30 ton/year. By realizing the modifications mentioned-above, the productivity of NTD-Si will increase to approximately 46 ton/year, that is about 10 times as great as the present one, and thus about a half of the present domestic demand of NTD-Si will be covered by processing utilization of the research reactors.Silicon carbide (SiC) semiconductors doped with the NTD technology are considered suitable for high power devices with superior performances to conventional Si-based devices. It is strongly recommended that R&D of SiC-NTD technology is performed in collaboration with industries and research institutes.

Access

:

- Accesses

InCites™

:

Altmetrics

:

[CLARIVATE ANALYTICS], [WEB OF SCIENCE], [HIGHLY CITED PAPER & CUP LOGO] and [HOT PAPER & FIRE LOGO] are trademarks of Clarivate Analytics, and/or its affiliated company or companies, and used herein by permission and/or license.